High-k dielectrics advance revealed
High-k dielectrics advance revealed
2008-04-17Newsfeed
IBM and its partners have revealed their high-k dielectrics and metal gates for the 32-nm node and are claim they can now outperform the rest of the industry in performance and power consumption.
IBM and its partners have revealed their high-k dielectrics and metal gates for the 32-nm node and are claim they can now outperform the rest of the industry in performance and power consumption.
The group -- which includes Infineon Technologies AG , ST Microelectronics NV, Chartered Semiconductor Manufacturing, Freescale , Samsung Electronics and Toshiba Corporation -- demonstrated their performance breakthrough on silicon made at IBM's 300-mm semiconductor lab in East Fishkill, NY.
The circuits had, on average, 35% better performance than 45-nm technology circuits at the same operating voltage, the alliance claims.
The 32-nm also consumed between 30 to 50% less power than the 45-nm, with respect to operating voltage, it said.
And testing on product library test chip and industry standard microprocessor critical paths has shown performance improvements of up to 40% over conventional (Poly/SiON) technology at the same technology dimensions, the group said.
The technology will be available to IBM and its partners from the second half of next year with customers and clients able to start designing devices using the process immediately, the alliance said.
Copyright © The Press Association 2008
